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參數資料
| 型號： | 41LV16100B-60KL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 19/22頁 |
| 文件大小： | 152K |
| 代理商： | 41LV16100B-60KL |
IS41LV16100B
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/13/05
ISSI
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Speed
Min.
Max.
Unit
IIL
Input Leakage Current
Any input 0V
≤ VIN ≤ VDD
–10
10
A
Other inputs not under test = 0V
IIO
Output Leakage Current
Output is disabled (Hi-Z)
–10
10
A
0V
≤ VOUT ≤ VDD
VOH
Output High Voltage Level
IOH = –2.0 mA (3.3V)
2.4
—
V
VOL
Output Low Voltage Level
IOL = 2.0 mA (3.3V)
—
0.4
V
ICC1
Standby Current: TTL
RAS, LCAS, UCAS
≥ VIH Commercial 3.3V
—
3
mA
Industrial 3.3V
—
4
mA
ICC2
Standby Current: CMOS
RAS, LCAS, UCAS
≥ VDD – 0.2V
3.3V
—
2
mA
ICC3
Operating Current:
RAS, LCAS, UCAS,
-50
—
180
mA
Random Read/Write(2,3,4)
Address Cycling, tRC = tRC (min.)
-60
—
170
Average Power Supply Current
ICC4
Operating Current:
RAS = VIL, LCAS, UCAS,
-50
—
180
mA
EDO Page Mode(2,3,4)
Cycling tPC = tPC (min.)
-60
—
170
Average Power Supply Current
ICC5
Refresh Current:
RAS Cycling, LCAS, UCAS
≥ VIH
-50
—
180
mA
RAS-Only(2,3)
tRC = tRC (min.)
-60
—
170
Average Power Supply Current
ICC6
Refresh Current:
RAS, LCAS, UCAS Cycling
-50
—
180
mA
CBR(2,3,5)
tRC = tRC (min.)
-60
—
170
Average Power Supply Current
Notes:
1. An initial pause of 200 s is required after power-up followed by eight
RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight
RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
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| 41LV16100B-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 41LV16100B-60KLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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