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參數(shù)資料
型號: 41LV16100B-60KL
廠商: Integrated Silicon Solution, Inc.
英文描述: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 100萬× 16(16兆)動態(tài)與江戶頁面模式內(nèi)存
文件頁數(shù): 20/22頁
文件大?。?/td> 152K
代理商: 41LV16100B-60KL
IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. B
04/13/05
ISSI
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tRC
Random READ or WRITE Cycle Time
85
110
ns
tRAC
Access Time from
RAS(6, 7)
—50
60
ns
tCAC
Access Time from
CAS(6, 8, 15)
—14
15
ns
tAA
Access Time from Column-Address(6)
—25
30
ns
tRAS
RAS Pulse Width
50
10K
60
10K
ns
tRP
RAS Precharge Time
30
40
ns
tCAS
CAS Pulse Width(26)
8
10K
10
10K
ns
tCP
CAS Precharge Time(9,25)
9—
10
ns
tCSH
CAS Hold Time (21)
50
60
ns
tRCD
RAS to CAS Delay Time(10, 20)
12
37
20
45
ns
tASR
Row-Address Setup Time
0
0
ns
tRAH
Row-Address Hold Time
8
10
ns
tASC
Column-Address Setup Time(20)
0—
ns
tCAH
Column-Address Hold Time(20)
8—
10
ns
tAR
Column-Address Hold Time
30
40
ns
(referenced to
RAS)
tRAD
RAS to Column-Address Delay Time(11)
14
25
15
30
ns
tRAL
Column-Address to
RAS Lead Time
25
30
ns
tRPC
RAS to CAS Precharge Time
5
5
ns
tRSH
RAS Hold Time(27)
14
15
ns
tCLZ
CAS to Output in Low-Z(15, 29)
0—
ns
tCRP
CAS to RAS Precharge Time(21)
5—
ns
tOD
Output Disable Time(19, 28, 29)
312
3
12
ns
tOE/tOEA
Output Enable Time(15, 16)
—14
15
ns
tOEHC
OE HIGH Hold Time from CAS HIGH
15
15
ns
tOEP
OE HIGH Pulse Width
10
10
ns
tOES
OE LOW to CAS HIGH Setup Time
5
5
ns
tRCS
Read Command Setup Time(17,20)
0—
ns
tRRH
Read Command Hold Time
0
0
ns
(referenced to
RAS)(12)
tRCH
Read Command Hold Time
0
0
ns
(referenced to
CAS)(12,17,21)
tWCH
Write Command Hold Time(17,27)
8—
10
ns
tWCR
Write Command Hold Time
40
50
ns
(referenced to
RAS)(17)
相關(guān)PDF資料
PDF描述
41LV16100B-60K 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60TI 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60TLI 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60TL 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60T 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
41LV16100B-60KLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
41LV16100B-60TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
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