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參數(shù)資料
| 型號： | 4AM16 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET陣列（不適用溝道/頁溝道功率MOSFET的陣列） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 48K |
| 代理商： | 4AM16 |
4AM16
3
Electrical Characteristics (Ta = 25°C)
N channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state R
DS(on)
—
0.13
0.17
I
D = 4 A, VGS = 10 V*
1
resistance
—
0.18
0.24
I
D = 4 A, VGS = 4 V*
1
Forward transfer admittance
|y
fs|
3.5
5.5
—
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
400
—
pF
V
DS = 10 V
Output capacitance
Coss
—
220
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
60
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—5
—
ns
I
D = 4 A
Rise time
t
r
—45
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
150
—
ns
R
L = 7.5
Fall time
t
f
—85
—
ns
Body to drain diode forward
voltage
V
DF
—
1.2
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
120
—
ns
I
F = 8 A, VGS = 0,
diF/dt = 50 A/s
Note
1. Pulse Test
See characteristic curves of 2SK970
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