
2-95
PIN Diode Chips for Hybrid MIC
Switches/Attenuators
Technical Data
Features
Low Series Resistance
0.8
Typical
Nitride Passivated
Description
These PIN diode chips are silicon
dioxide or nitride passivated. The
5082-0001 has a mesa construc-
tion and the 5082-0012 has a
planar construction. The fabrica-
tion processes are optimized for
long term reliability and tightly
controlled for uniformity in
electrical performance.
Applications
These general purpose PIN
diodes are intended for low
power switching applications
such as duplexers, antenna
switching matrices, digital phase
shifters, time multiplex filters, TR
switches, pulse and amplitude
modulators, limiters, leveling
circuits, and attenuators.
The 5082-0001 is optimized for
applications requiring fast
switching.
5082-0001
5082-0012
Outline 01B
D
X
Y
X
5082-0001
D
X
Y
X
ALL OTHER CHIPS
PART NO. 5082-
0012
0.10
(4)
0.10
(4.0)
Au. Cathode
Au. Anode
DIMENSIONS
D
±0.03 (1)
X
±0.05 (2)
Y
±0.03 (1)
Top Contact
Bottom Contact
0001
0.06
(2.5)
Au. Anode
Au. Cathode
Dimensions in millimeters (1/1000 inch)
0.38
(15)
0.11
(4.5)
Maximum Ratings
Junction Operating and Storage
Temperature Range ...................................................... -65
°Cto+150°C
Soldering Temperature
5082-0001 ....................................................... +300
°C for 1 min. max.
5082-0012 ....................................................... +425
°C for 1 min. max.
5965-8880E