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參數資料
| 型號： | 619 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | SOT89 NPN硅功率（開關）晶體管 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 1660K |
| 代理商： | 619 |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
S YMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS .
Collector-Base
Breakdown Voltage
V
(BR)CBO
50
190
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
50
65
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.3
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=40V
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
nA
V
CES
=40V
Collector-Emitter
S aturation Voltage
V
CE(S AT)
13
150
190
240
25
220
260
320
mV
mV
mV
mV
I
C
=0.1A, I
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
=50mA*
I
C
=2.75A,I
B
=100mA*
Base-Emitter
S aturation Voltage
V
BE(S AT)
0.97
1.1
V
I
C
=2.75A,
I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(ON)
0.89
1.0
V
I
C
=2.75A, V
CE
=2V*
S tatic Forward Current
Transfer Ratio
h
FE
200
300
200
100
400
450
400
200
30
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100
165
MHz
I
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
OBO
12
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(ON)
170
ns
V
CC
=10V, I
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time
t
(OFF)
750
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FCX619
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