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參數(shù)資料
| 型號(hào)： | 62LV1024SC |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 元件分類： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的128K的× 8位 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 383K |
| 代理商： | 62LV1024SC |
Revision 2.2
April 2001
3
R0201-BS62LV1024
BSI
BS62LV1024
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX.
UNITS
Vcc=3.0V
V
IL
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current
Vcc=5.0V
-0.5
--
0.8
V
Vcc=3.0V
2.0
2.2
--
V
IH
Vcc=5.0V
--
Vcc+0.2
V
I
IL
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE1= V
IH
, CE2= V
IL,
or
OE = V
IH
, V
I/O
= 0V to Vcc
--
1
uA
I
OL
Output Leakage Current
--
--
1
uA
Vcc=3.0V
V
OL
Output Low Voltage
Vcc = Max, I
OL
= 2mA
Vcc=5.0V
--
--
0.4
V
Vcc=3.0V
V
OH
Output High Voltage
Vcc = Min, I
OH
= -1mA
Vcc=5.0V
2.4
--
--
V
Vcc=3.0V
--
--
--
--
--
--
--
--
--
--
20
35
1
2
1
3
I
CC
Operating Power Supply
Current
CE1 = V
IL
, or CE2 = V
IH
,
I
DQ
= 0mA, F = Fmax
(3)
Vcc=5.0V
mA
Vcc=3.0V
I
CCSB
Standby Current-TTL
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA, F = Fmax
(3)
Vcc=5.0V
mA
Vcc=3.0V
0.02
0.4
I
CCSB1
Standby Current-CMOS
CE1
Vcc-0.2V, CE2
0.2V,
V
IN
Vcc-0.2V or V
IN
0.2V
Vcc=5.0V
uA
1. Typical characteristics are at TA = 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
DATA RETENTION CHARACTERISTICS
( TA = 0
o
C to + 70
o
C )
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
DC ELECTRICAL CHARACTERISTICS
( TA = 0
o
C to + 70
o
C )
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
CE1
Data Retention Mode
≥
Vcc
t
CDR
Vcc
t
R
V
IH
V
IH
Vcc
V
DR
1.5V
CE1 Vcc - 0.2V
LOW V
CC
DATA RETENTION WAVEFORM (2)
( CE2 Controlled )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
DR
Vcc for Data Retention
CE1
Vcc - 0.2V, CE2
0.2V,
V
IN
Vcc - 0.2V or V
IN
0.2V
1.5
--
--
V
I
CCDR
Data Retention Current
CE1
Vcc - 0.2V, CE2
0.2V,
V
IN
Vcc - 0.2V or V
IN
0.2V
--
0.02
0.3
uA
t
CDR
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
--
--
ns
t
R
See Retention Waveform
T
RC
(2)
--
--
ns
CE2
Data Retention Mode
Vcc
t
CDR
Vcc
t
R
V
IL
V
IL
Vcc
V
DR
1.5V
CE2
0.2V
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