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參數資料
型號: 62WV5128ALL
廠商: Integrated Silicon Solution, Inc.
英文描述: 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
中文描述: 為512k × 8低電壓,超低功耗的CMOS靜態RAM
文件頁數: 5/14頁
文件大小: 83K
代理商: 62WV5128ALL
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/30/03
5
IS62WV5128ALL, IS62WV5128BLL
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128ALL
(1.65V - 2.2V)
Symbol
Parameter
Test Conditions
Max.
70 ns
25
30
10
10
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V Com.
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
,
f = 1 MH
Z
Com.
Ind.
mA
I
CC
1
mA
Ind.
I
SB
1
TTL Standby Current
(TTL Inputs)
Com.
Ind.
0.35
0.35
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CS1
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
15
15
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128BLL
(2.5V - 3.6V)
Symbol
Parameter
Test Conditions
Max.
55 ns
40
45
15
15
Max.
70 ns
35
40
15
15
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V Com.
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
,
f = 1 MH
Z
Com.
Ind.
mA
I
CC
1
mA
Ind.
I
SB
1
TTL Standby Current
(TTL Inputs)
Com.
Ind.
0.35
0.35
0.35
0.35
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CS1
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
15
15
15
15
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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