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參數(shù)資料
| 型號(hào)： | 6N1136-X007 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated |
| 中文描述： | 高速光耦，1千萬(wàn)桶，與晶體管輸出，110 C額定光電二極管 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 228K |
| 代理商： | 6N1136-X007 |
6N1135/ 6N1136
Vishay Semiconductors
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
1
i179081
1
2
3
4
8
7
6
5
C (V
CC
)
NC
A
C
NC
B (V
B
)
C (V
O
)
E (GND)
Pb
P
b
-free
e3
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
Operating Temperature from -55 °C to +110 °C
Isolation Test Voltage: 5300 V
RMS
TTL Compatible
High Bit Rates: 1.0 MBd
Bandwidth 2.0 MHz
Open-Collector Output
External Base Wiring Possible
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL 1577 - File No. E52744 System Code H or J
DIN EN 60747-5-2 (VDE0884)
CUL - File No. E52744, equivalent to CSA bulletin
5A
Description
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
6N1135
CTR
≥
7 %, DIP-8
6N1136
CTR
≥
19 %, DIP-8
6N1135-X007
CTR
≥
7 %, SMD-8 (option 7)
6N1136-X006
CTR
≥
19 %, DIP-8 400 mil (option 6)
6N1136-X007
CTR
≥
19 %, SMD-8 (option 7)
6N1136-X009
CTR
≥
19 %, SMD-8 (option 9)
Parameter
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
R
th
P
diss
Value
5.0
Unit
V
Reverse voltages
Forward current
25
mA
Peak forward current
Maximum surge forward current t
≤
1.0
μ
s, 300 pulses/s
t = 1.0 ms, duty cycle 50 %
50
mA
1.0
A
Thermal resistance
700
K/W
Power dissipation
T
amb
= 70 °C
45
mW
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 6N1136-X009 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated |
| 6N1136-X009T | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>15% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N134 | 功能描述:高速光耦合器 10MBd 2CH 1500Vdc Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N134#100 | 功能描述:高速光耦合器 10MBd 2CH 1500Vdc Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N134#200 | 功能描述:高速光耦合器 10MBd 2CH 1500Vdc Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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