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參數(shù)資料
| 型號(hào)： | 6N136-X007T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | 6N135, 6N136 High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output |
| 中文描述： | High Speed Optocouplers 1Mbd High-Speed Trans Out CTR>35% |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 164K |
| 代理商： | 6N136-X007T |
6N135, 6N136
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 05-Sep-11
2
Document Number: 83604
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Supply voltage
Output voltage
Emitter base voltage
Output current
Maximum output current
Base current
Thermal resistance
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Pollution degree (DIN VDE 0109)
V
S
V
O
V
EBO
I
O
- 0.5 to 15
- 0.5 to 15
5
8
16
5
300
100
V
V
V
mA
mA
mA
K/W
mW
I
B
T
amb
= 70 °C
P
diss
t = 1 s
V
ISO
5300
V
RMS
2
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
10
12
10
11
°C
°C
Storage temperature range
Ambient temperature range
- 55 to + 125
- 55 to + 100
Soldering temperature
(1)
max.
10 s, dip soldering
0.5 mm from case bottom
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 16 mA
Breakdown voltage
I
R
= 10 μA
Reverse current
V
R
= 5 V
Capacitance
V
R
= 0 V, f = 1 MHz
Temperature coefficient, forward
voltage
OUTPUT
I
F
= 16 mA, V
O
= open,
V
CC
= 15 V
I
F
= 0 mA, V
O
= open,
V
CC
= 15 V
I
F
= 16 mA, I
O
= 1.1 mA,
V
CC
= 4.5 V
I
F
= 16 mA, I
O
= 2.4 mA,
V
CC
= 4.5 V
I
F
= 0 mA, V
O
= V
CC
= 5.5 V
I
F
= 0 mA, V
O
= V
CC
= 15 V
COUPLER
Capacitance (input to output)
f = 1 MHz
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
V
BR
I
R
C
O
1.33
1.9
V
V
μA
pF
5
0.5
30
10
I
F
= 16 mA
V
F
/
T
A
- 1.7
mV/°C
Logic low supply current
I
CCL
150
μA
Logic high supply current
I
CCH
0.01
1
μA
Output voltage, output low
6N135
V
OL
0.1
0.4
V
6N136
V
OL
0.1
0.4
V
Output current, output high
I
OH
I
OH
3
500
1
nA
μA
0.01
C
IO
0.6
pF
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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| 6N136-X009 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>35% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136-X009T | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>35% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136-X016 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>35% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136-X017T | 功能描述:晶體管輸出光電耦合器 SMD-8 CPLR CTR>19% 1MDB VDE -E RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 6N136-X019T | 功能描述:晶體管輸出光電耦合器 SMD-8 CPLR CTR>19% 1MDB VDE -E RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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