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參數資料
| 型號： | 6N136-X007T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | 6N135, 6N136 High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output |
| 中文描述： | High Speed Optocouplers 1Mbd High-Speed Trans Out CTR>35% |
| 文件頁數： | 3/8頁 |
| 文件大小： | 164K |
| 代理商： | 6N136-X007T |
6N135, 6N136
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 05-Sep-11
3
Document Number: 83604
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
According to DIN EN 60747-5-2 (VDE 0884), this optocoupler is suitable for “safe electrical insulation” only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of protective circuits.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
6N135
6N136
6N135
6N136
SYMBOL
CTR
CTR
CTR
CTR
MIN.
7
19
5
15
TYP.
16
35
MAX.
UNIT
%
%
%
%
Current transfer ratio
I
F
= 16 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
I
F
= 16 mA, V
O
= 0.5 V,
V
CC
= 4.5 V
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 16 mA, V
CC
= 5 V, R
L
= 4.1 k
I
F
= 16 mA, V
CC
= 5 V, R
L
= 1.9 k
I
F
= 16 mA, V
CC
= 5 V, R
L
= 4.1 k
I
F
= 16 mA, V
CC
= 5 V, R
L
= 1.9 k
PART
6N135
6N136
6N135
6N136
SYMBOL
t
PHL
t
PHL
t
PLH
t
PLH
MIN.
TYP.
0.3
0.2
0.3
0.2
MAX.
1.5
0.8
1.5
0.8
UNIT
μs
μs
μs
μs
High to low
Low to high
COMMON MODE TRANSIENT IMMUNITY
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 4.1 k
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 1.9 k
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 4.1 k
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 1.9 k
PART
6N135
6N136
6N135
6N136
SYMBOL
|CM
H
|
|CM
H
|
|CM
L
|
|CM
L
|
MIN.
TYP.
1000
1000
1000
1000
MAX.
UNIT
V/μs
V/μs
V/μs
V/μs
High
Low
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
Creepage distance
Clearance distance
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
55/100/21
CTI
175
8000
890
399
V
V
500
300
175
mW
mA
°C
mm
mm
mm
mm
Standard DIP-8
Standard DIP-8
400 mil DIP-8
400 mil DIP-8
7
7
8
8
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 6N136-X009 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>35% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136-X009T | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>35% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136-X016 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>35% RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| 6N136-X017T | 功能描述:晶體管輸出光電耦合器 SMD-8 CPLR CTR>19% 1MDB VDE -E RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 6N136-X019T | 功能描述:晶體管輸出光電耦合器 SMD-8 CPLR CTR>19% 1MDB VDE -E RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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