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參數資料
| 型號： | 71V016SA12PHGI8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, TSOP2-44 |
| 文件頁數： | 6/9頁 |
| 文件大?。?/td> | 283K |
| 代理商： | 71V016SA12PHGI8 |
6.42
6
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 2(1)
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ+ tDW to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. IftheCS LOWorBHEand BLE LOWtransitionoccurssimultaneouslywithorafterthe WELOWtransition,theoutputsremaininahigh-impedancestate.
5. Transitionismeasured±200mVfromsteadystate.
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4)
NOTES:
1. WE is HIGH for Read Cycle.
2. Address must be valid prior to or coincident with the later of CS, BHE, or BLE transition LOW; otherwise tAA is the limiting parameter.
3. Transitionismeasured±200mVfromsteadystate.
ADDRESS
OE
CS
DATAOUT
3834 drw 07
(3)
DATA
VALID
tAA
tRC
tOE
tOLZ
tCHZ
tOHZ
OUT
BHE, BLE
(3) t
ACS
(3)
tBLZ
tCLZ
(2)
tBE
tOH
tBHZ (3)
(2)
ADDRESS
CS
DATAIN
3834 drw 08
(5)
DATAIN VALID
tWC
tAS
tWHZ
(2)
tCW
tCHZ
tOW
tWR
WE
tAW
DATAOUT
tDW
tDH
PREVIOUS DATA VALID
DATA VALID
BHE , BLE
tBW
tWP
(5)
tBHZ
(3)
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相關代理商/技術參數 |
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| 71V016SA12PHI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube |
| 71V016SA12PHI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R |
| 71V016SA12YG | 功能描述:靜態隨機存取存儲器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA12YG8 | 功能描述:靜態隨機存取存儲器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA12YGI | 功能描述:靜態隨機存取存儲器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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