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參數(shù)資料
型號(hào): 7P12FLV262C25
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi): PROM
英文描述: 6M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
封裝: CARD-68
文件頁(yè)數(shù): 6/11頁(yè)
文件大小: 409K
代理商: 7P12FLV262C25
PCMCIA Flash Memory Card
FLV Series
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June, 2003
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not
used in word access mode. A25 is the most signicant bit
DQ0 - DQ15
INPUT/OUTPUT DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.
CE1#, CE2#
INPUT
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0, CE1#
and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENABLE: Active low signal gating read data from the memory card.
WE#
INPUT
WRITE ENABLE: Active low signal gating write data to the memory card.
RDY/BSY#(*)
OUTPUT
READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that
the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy with
internally timed erase or write activities.
CD1#, CD2#
OUTPUT
CARD DETECT 1 and 2: Provide card insertion detection. These signals are internally connected to ground on the card.
The host shall monitor these signals to detect card insertion (pulled-up on host side).
WP
OUTPUT
WRITE PROTECT: Write protect reects the status of the Write Protect switch on the memory card. WP set to high
= write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write
protect switch, this signal will be pulled low internally indicating write protect = “off”.
VPP1, VPP2
N.C.
PROGRAM/ERASE POWER SUPPLY: Provides programming voltages for card. Not connected for 3.3V/5V only card.
VCC
CARD POWER SUPPLY: 5.0V for all internal circuitry
GND
CARD GROUND
REG#
INPUT
ATTRIBUTE MEMORY SELECT : Active low signal, enables access to attribute memory space,occupied by the Card
Information Structure (CIS) and Card Registers.
RST
INPUT
RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down control for
the memory array.
WAIT#
OUTPUT
WAIT#: This signal is pulled high internally for compatibility. No WAIT# states are generated.
BVD1, BVD2
OUTPUT
BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.
VS1, VS2
OUTPUT
VOLTAGE SENSE: Noties the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V card
RFU
RESERVED FOR FUTURE USE
NC
NO INTERNAL CONNECTION TO CARD: pin may be driven or left oating
CARD SIGNAL DESCRIPTION
READ function
Common Memory
Attribute Memory
Function Mode
CE2#
CE1#
A0
OE#
WE#
REG#
D15-D8
D7-D0
REG#
D15-D8
D7-D0
Standby Mode
H
X
High-Z
X
High-Z
Byte Access (8 bits)
H
L
H
High-Z
Even-Byte
L
High-Z
Even-Byte
H
L
H
L
H
High-Z
Odd-Byte
L
High-Z
Not Valid
Word Access (16 bits)
L
X
L
H
Odd-Byte
Even-Byte
L
Not Valid
Even-Byte
Odd-Byte Only Access
L
H
X
L
H
Odd-Byte
High-Z
L
Not Valid
High-Z
WRITE function
Standby Mode
H
X
Byte Access (8 bits)
H
L
H
L
H
X
Even-Byte
L
X
Even-Byte
H
L
H
L
H
X
Odd-Byte
L
X
Word Access (16 bits)
L
X
H
L
H
Odd-Byte
Even-Byte
L
X
Even-Byte
Odd-Byte Only Access
L
H
X
H
L
H
Odd-Byte
X
L
X
FUNCTIONAL TRUTH TABLE
(*) Signals not supported by FLV51-FLV58 (NC)
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