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參數(shù)資料
| 型號： | 933363610113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.8 A, 600 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 81K |
| 代理商： | 933363610113 |
1996 Oct 03
2
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page (Datasheet)
MAM047
ka
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW54
600
V
BYW55
800
V
BYW56
1000
V
VRWM
crest working reverse voltage
BYW54
600
V
BYW55
800
V
BYW56
1000
V
VR
continuous reverse voltage
BYW54
600
V
BYW55
800
V
BYW56
1000
V
IF(AV)
average forward current
Ttp =45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
2.0
A
Tamb =80 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
0.8
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
50
A
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.5
65
+175
°C
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