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參數(shù)資料
| 型號(hào)： | 933363610113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.8 A, 600 V, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 81K |
| 代理商： | 933363610113 |
1996 Oct 03
3
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF =1A; Tj =Tj max; see Fig.6
0.8
V
IF = 1 A; see Fig.6
1.0
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYW54
650
V
BYW55
900
V
BYW56
1100
V
IR
reverse current
VR =VRRMmax; see Fig.7
1
A
VR =VRRMmax; Tj = 165 °C;
see Fig.7
150
A
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.10
3
s
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
50
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
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