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參數資料
| 型號： | 933363620113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.8 A, 800 V, SILICON, SIGNAL DIODE |
| 文件頁數： | 4/9頁 |
| 文件大小： | 81K |
| 代理商： | 933363620113 |
1996 Oct 03
4
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
a = 1.57; VR =VRRMmax; δ = 0.5; lead length 10 mm.
handbook, halfpage
3
2
1
0
MBG044
0
40
200
80
120
160
Ttp (°C)
IF(AV)
(A)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
a = 1.57; VR =VRRMmax; δ = 0.5; device mounted as shown in Fig.9.
handbook, halfpage
0
IF(AV)
(A)
40
200
1.6
1.2
0.4
0
0.8
80
120
160
Tamb (°C)
MBG054
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
handbook, halfpage
01
23
4
3
1
0
2
MGC745
2
P
(W)
I
F(AV)
(A)
1.42
2.5
a = 3
1.57
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
0
1200
0
MBH387
100
200
800
400
VR (V)
Tj
(
°C)
55
54
56
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