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參數資料
| 型號： | 933363620113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.8 A, 800 V, SILICON, SIGNAL DIODE |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 933363620113 |
1996 Oct 03
5
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
Solid line: Tj =25 °C.
Dotted line: Tj =Tj max.
Fig.6
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
15
I
F
10
5
0
12
MGC735
V
F
(V)
(A)
Fig.7
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10 3
10
(
A)
I
R
2
10
1
10 1
200
0
MGC734
40
80
120
160
T
j
(
oC)
max
VR =VRRMmax.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
handbook, halfpage
10 2
MBG031
10
1
10 2
10
Cd
(pF)
VR (V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
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