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參數資料
| 型號： | 933372690652 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 多路復用及模擬開關 |
| 英文描述： | QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO14 |
| 封裝： | PLASTIC, SOT-108, SO-14 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 76K |
| 代理商： | 933372690652 |
January 1995
3
Philips Semiconductors
Product specication
Quadruple bilateral switches
HEF4016B
gates
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
DC CHARACTERISTICS
Tamb =25 °C; VSS = 0 V (unless otherwise specied)
Power dissipation per switch
P
max.
100
mW
For other RATINGS see Family Specifications
PARAMETER
VDD
V
SYMBOL
TYP.
MAX.
UNIT
CONDITIONS
5
8000
En at VIH; Vis = 0 to VDD; see Fig.4
ON resistance
10
RON
230
690
15
115
350
5
140
425
En at VIH; Vis =VSS; see Fig.4
ON resistance
10
RON
65
195
15
50
145
5
170
515
En at VIH; Vis =VDD; see Fig.4
ON resistance
10
RON
95
285
15
75
220
‘
’ ON resistance
5
200
En at VIH; Vis = 0 to VDD; see Fig.4
between any two
10
R
ON
15
channels
15
10
PARAMETER
VDD
V
SYMBOL
Tamb (°C)
UNIT
40
+ 25
+ 85
CONDITION
MIN.
MAX. MIN. MAX. MIN. MAX.
Quiescent
5
1,0
1,0
7,5
AVSS = 0; all valid
input combinations;
VI =VSS or VDD
device
10
IDD
2,0
2,0
15,0
A
current
15
4,0
4,0
30,0
A
Input leakage
15
± I
IN
300
1000
nA
En at VSS or VDD
current at En
OFF-state leakage
5
nA
En at VIL;
Vis =VSS or VDD;
Vos =VDD or VSS
current, any
10
IOZ
nA
channel OFF
15
200
nA
En input
5
1,5
1,5
1,5
V
switch OFF; see
Fig.9 for IOZ
voltage LOW
10
VIL
3,0
3,0
3,0
V
15
4,0
4,0
4,0
V
En input
5
3,5
3,5
3,5
V
low-impedance
between Y and Z (ON
condition)
see RON switch
voltage HIGH
10
VIH
7,0
7,0
7,0
V
15
11,0
11,0
11,0
V
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