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參數資料
| 型號： | 933463780127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 49K |
| 代理商： | 933463780127 |
Philips Semiconductors
Product specification
Rectifier diodes
BY229 series
fast, soft-recovery
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 200 V/ 400 V/ 600 V/800 V
Fast switching
Soft recovery characteristic
I
F(AV) = 8 A
High thermal cycling performance
Low thermal resistance
I
FSM ≤ 60 A
t
rr ≤ 135 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier
diodes
featuring
low
forward voltage drop, fast reverse
1
cathode
recovery
and
soft
recovery
characteristic. The devices are
2
anode
intended for use in TV receivers,
monitors and switched mode power
tab
cathode
supplies.
The BY229 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BY229
-200
-400
-600
-800
V
RSM
Peak non-repetitive reverse
-
200
400
600
800
V
voltage
V
RRM
Peak repetitive reverse voltage
-
200
400
600
800
V
RWM
Crest working reverse voltage
-
150
300
500
600
V
R
Continuous reverse voltage
-
150
300
500
600
V
I
F(AV)
Average forward current
1
square wave;
-
8
A
δ = 0.5;
T
mb ≤ 122 C
sinusoidal;
-
7
A
a = 1.57;
T
mb ≤ 125 C
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
16
A
T
mb ≤ 122 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
60
A
current.
t = 8.3 ms
-
66
A
sinusoidal;
T
j = 150 C prior to
surge; with
reapplied V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
18
A
2s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
k
a
12
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200
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