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| 型號(hào)： | 933463780127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 49K |
| 代理商： | 933463780127 |
Philips Semiconductors
Product specification
Rectifier diodes
BY229 series
fast, soft-recovery
Fig.1. Definition of t
rr, Qs and Irrm
Fig.2. Maximum forward dissipation, P
F = f(IF(AV));
square wave current waveform; parameter D = duty
cycle = t
p/T.
Fig.3. Maximum forward dissipation, P
F = f(IF(AV));
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)/IF(AV).
Fig.4. Maximum non-repetitive rms forward current.
I
F = f(tp); sinusoidal current waveform; Tj = 150C prior
to surge with reapplied V
RWM.
Fig.5. Typical and maximum forward characteristic;
I
F = f(VF); parameter Tj
Fig.6. Maximum Q
s at Tj = 25C and 150C
100%
time
dI
dt
F
I
R
I
F
I
rrm
trr
25%
Qs
1ms
10ms
0.1s
1s
10s
tp / s
IFS(RMS) / A
BY229
80
70
60
50
40
30
20
10
0
IFSM
0
1
BY229F
VF / V
IF / A
30
20
10
0
2
0.5
1.5
max
typ
Tj = 150 C
Tj = 25 C
0
2
4
6
8
10
12
BY329
IF(AV) / A
PF / W
20
15
10
5
0
Tmb(max) / C
150
110
120
130
140
0.5
0.2
0.1
D = 1.0
D =
tp
T
I
t
Vo = 1.25 V
Rs = 0.03 Ohms
1
100
BY329
-dIF/dt (A/us)
Qs / uC
10
1
0.1
10
2 A
IF = 10 A
10 A
1 A
2 A
Tj = 150 C
Tj = 25 C
0
2
4
6
8
BY329
IF(AV) / A
PF / W
15
10
5
0
4
2.8
2.2
1.9
a = 1.57
Tmb(max) / C
150
120
130
140
Vo = 1.25 V
Rs = 0.03 Ohms
September 1998
3
Rev 1.200
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