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參數資料
| 型號： | 933728960127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 200 V, 2.5 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 67K |
| 代理商： | 933728960127 |
October 2001
2
Rev 1.100
Philips Semiconductors
Product specication
Triacs logic level
T2322B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate triac in a
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope, intended for use in
general purpose bidirectional switching
V
DRM
Repetitive peak off-state voltages
200
V
and phase control applications. This
I
T(RMS)
RMS on-state current
2.5
A
device is intended to be interfaced
I
TSM
Non-repetitive peak on-state current
27
A
directly
to
microcontrollers,
logic
integrated circuits and other low power
gate trigger circuits.
PINNING - SOT32
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DRM
Repetitive peak off-state
-
200
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb ≤ 107 C
-
2.5
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 C prior to
on-state current
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I
2tI2t for fusing
t = 10 ms
-
3.1
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 6 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/s
triggering
T2+ G+
-
50
A/
s
T2+ G-
-
50
A/
s
T2- G-
-
50
A/
s
T2- G+
-
10
A/
s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
MBC077 - 1
12
3
Top view
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
s.
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