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參數資料
型號: 933728960127
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 200 V, 2.5 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-126
封裝: PLASTIC PACKAGE-3
文件頁數: 4/8頁
文件大小: 67K
代理商: 933728960127
October 2001
4
Rev 1.100
Philips Semiconductors
Product specication
Triacs logic level
T2322B
Fig.1. Maximum on-state dissipation, P
tot, versus rms
on-state current, I
T(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb 107C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
012345
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
122
119
116
113
110
107
104
101
1
-50
0
50
100
150
0
1
2
3
4
5
Tmb / C
IT(RMS) / A
107 C
10us
100us
1ms
10ms
100ms
10
100
1000
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01
0.1
1
10
0
2
4
6
8
10
12
surge duration / s
IT(RMS) / A
1
10
100
1000
0
5
10
15
20
25
30
BT136
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
相關PDF資料
PDF描述
933737730113 0.75 A, 200 V, SILICON, SIGNAL DIODE
933737750113 0.75 A, 600 V, SILICON, SIGNAL DIODE
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933737760143 0.75 A, 800 V, SILICON, SIGNAL DIODE
933737770133 0.75 A, 1000 V, SILICON, SIGNAL DIODE
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