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參數(shù)資料
| 型號(hào)： | 933742290235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 47K |
| 代理商： | 933742290235 |
2001 Sep 05
2
Philips Semiconductors
Product specication
Schottky barrier double diode
BAT74
FEATURES
Low forward voltage
Guard ring protected
Small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode. Two separate dies
encapsulated in a SOT143B small plastic SMD package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BAT74
L41
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
anode (a2)
4
anode (a1)
Fig.1
Simplified outline (SOT143B), pin
configuration and symbol.
handbook, halfpage 43
2
1
Top view
MAM194
2
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse operation and the other is in forward operation at the same moment, total device current is max. 200 mA.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
600
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; see Fig.2
230
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
Double diode operation
VR
continuous reverse voltage
30
V
series connection
60
V
IF
continuous forward current
110(1)
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
200
mA
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