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參數(shù)資料
| 型號： | 933744360127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 42K |
| 代理商： | 933744360127 |
Philips Semiconductors
Product specification
Dual rectifier diodes
BYT28 series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.05 V
High thermal cycling performance
Low thermal resistance
I
O(AV) = 10 A
t
rr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
Dual, common cathode, ultra-fast,
PIN
DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high
1
cathode
frequency switched mode power
supplies.
2
anode
The BYT28 series is supplied in the
tab
cathode
conventional
leaded
SOT78
(TO220AB) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYT28
-300
-400
-500
V
RRM
Repetitive peak reverse voltage
-
300
400
500
V
R
Continuous reverse voltage
T
mb ≤ 147C
-
300
400
500
V
I
O(AV)
Average rectified output current square wave;
δ = 0.5;
-
10
A
(both diodes conducting)
1
T
mb ≤ 115 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
50
A
current per diode.
t = 8.3 ms
-
55
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
4.5
K/W
heatsink
both diodes conducting
-
3.0
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a1
a2
13
2
12 3
tab
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.400
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