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參數資料
| 型號： | 933744360127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 42K |
| 代理商： | 933744360127 |
Philips Semiconductors
Product specification
Dual rectifier diodes
BYT28 series
ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 5 A; Tj = 150C
-
0.95
1.05
V
I
F = 10 A
-
1.30
1.40
V
I
R
Reverse current
V
R = VRRM
-
2.0
10
A
V
R = VRRM; Tj = 100 C
-
10
200
A
Q
s
Reverse recovery charge
I
F = 2 A to VR ≥ 30 V;
-
50
60
nC
dI
F/dt = 20 A/s
t
rr
Reverse recovery time
I
F = 1 A to VR ≥ 30 V;
-
50
60
ns
dI
F/dt = 100 A/s
I
rrm
Peak reverse recovery current
I
F = 5 A to VR ≥ 30 V;
-
2.0
3.0
A
dI
F/dt = 50 A/s; Tj = 100C
V
fr
Forward recovery voltage
I
F = 1 A; dIF/dt = 10 A/s
-
2.5
-
V
Fig.1. Definition of t
rr, Qs and Irrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square wave where I
F(AV) =IF(RMS) x √D.
Fig.4. Maximum forward dissipation P
F = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
01
23
456
78
0
1
2
3
4
5
6
7
8
9
D = 1.0
0.5
0.2
0.1
BYT28
IF(AV) / A
PF / W
Rs = 0.021 Ohms
Vo = 0.945 V
Tmb(max) / C
150
145.5
141
132
123
114
136.5
127.5
118.5
109.5
D =
tp
T
t
I
time
V F
V
fr
V F
I
F
01
234
5
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
BYT28
IF(AV) / A
PF / W
Tmb(max) / C
150
145.5
141
132
136.5
127.5
123
Vo = 0.945 V
Rs = 0.021 Ohms
October 1998
2
Rev 1.400
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