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參數資料
| 型號： | 934003620135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.03 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 43K |
| 代理商： | 934003620135 |
1998 Jun 24
2
Philips Semiconductors
Product specication
Schottky barrier diodes
BAS81; BAS82; BAS83
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed small SMD
package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges. This surface
mounted diode is encapsulated in a
hermetically sealed SOD80C glass
SMD package with tin-plated metal
discs at each end. It is suitable for
“automatic placement” and as such it
can withstand immersion soldering.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
handbook, halfpage
MAM190
ka
Cathode indicated by a grey band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
BAS81
40
V
BAS82
50
V
BAS83
60
V
IF
continuous forward current
30
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
150
mA
IFSM
non-repetitive peak forward current
tp =1s
500
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
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