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參數(shù)資料
| 型號(hào)： | 934003620135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.03 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 934003620135 |
1998 Jun 24
3
Philips Semiconductors
Product specication
Schottky barrier diodes
BAS81; BAS82; BAS83
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulsed test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD80 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.2
IF = 0.1 mA
330
mV
IF =1mA
410
mV
IF =15mA
1V
IR
reverse current
VR =VRmax; see Fig.3
200
nA
Cd
diode capacitance
f = 1 MHz; VR = 2 V; see Fig.4
1.6
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
320
K/W
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