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參數(shù)資料
| 型號： | 934016650112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.4 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 84K |
| 代理商： | 934016650112 |
1996 May 24
3
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYM56 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.5
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF =3A; Tj =Tj max; see Fig.6
0.95
V
IF = 3 A; see Fig.6
1.15
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYM56A
225
V
BYM56B
450
V
BYM56C
650
V
BYM56D
900
V
BYM56E
1100
V
IR
reverse current
VR =VRRMmax; see Fig.7
1
A
VR =VRRMmax; Tj = 165 °C;
see Fig.7
150
A
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.10
3
s
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
90
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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