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參數資料
| 型號： | 934030330127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1500 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 40K |
| 代理商： | 934030330127 |
Philips Semiconductors
Product specification
Damper diode
BY359X-1500, BY359X-1500S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 1500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.8 V / 2 V
High thermal cycling performance
Isolated mounting tab
I
F(RMS) = 15.7 A
I
FSM ≤ 60 A
t
rr ≤ 600 ns / 350 ns
GENERAL DESCRIPTION
PINNING
SOD113
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode in a plastic envelope
featuring low forward voltage drop,
1
cathode
fast reverse recovery and soft
recovery characteristic. The device
2
anode
is intended for use in TV receivers
and PC monitors.
tab
isolated
The BY359X series is supplied in
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non-repetitive reverse
-
1500
V
voltage
V
RRM
Peak repetitive reverse voltage
-
1500
V
RWM
Crest working reverse voltage
-
1300
V
I
F(peak)
Peak forward current
16-32kHz TV
BY359X-1500
-
10
A
31-70kHz monitor
BY359X-1500S
-
7
A
I
F(RMS)
RMS forward current
-
15.7
A
I
FRM
Peak repetitive forward current
sinusoidal; a = 1.57
-
60
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; T
j = 150 C prior to surge;
with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
k
a
12
case
September 1998
1
Rev 1.300
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