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參數資料
| 型號： | 934037680127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, TO-220F, FULL PACK-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 49K |
| 代理商： | 934037680127 |
Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated
double
diffused
SYMBOL
PARAMETER
MAX. MAX.
MAX.
UNIT
rectifier diodes in a full pack plastic
envelope
featuring
low
forward
BY329X
-800
-1000 -1200
voltage drop, fast reverse recovery
V
RRM
Repetitive peak reverse
800
1000
1200
V
and soft recovery characteristic. The
voltage
devices are intended for use in TV
I
F(AV)
Average forward current
8
A
receivers, monitors and switched
I
FSM
Non-repetitive peak
65
A
mode power supplies.
forward current
t
rr
Reverse recovery time
145
ns
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-800
-1000
-1200
V
RSM
Non-repetitive peak reverse
-
800
1000
1200
V
voltage
V
RRM
Repetitive peak reverse voltage
-
800
1000
1200
V
RWM
Crest working reverse voltage
-
600
800
1000
V
I
F(AV)
Average forward current
1
square wave;
δ = 0.5;
-
8
A
T
hs ≤ 83 C
sinusoidal; a = 1.57;
-
7
A
T
hs ≤ 90 C
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
16
A
T
hs ≤ 83 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
65
A
current.
t = 8.3 ms
-
71
A
sinusoidal; T
j = 150 C prior
to surge; with reapplied
V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
28
A
2s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
12
case
k
a
1
2
1 Neglecting switching and reverse current losses.
May 1995
1
Rev 1.000
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