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參數資料
| 型號： | 934037680127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, TO-220F, FULL PACK-2 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 49K |
| 代理商： | 934037680127 |
Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
4.8
K/W
heatsink
without heatsink compound
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 20 A
-
1.5
1.85
V
I
R
Reverse current
V
R = VRWM; Tj = 125 C
-
0.1
1.0
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
rr
Reverse recovery time
I
F = 1 A; VR > 30 V; -dIF/dt = 50 A/s
-
125
145
ns
Q
s
Reverse recovery charge
I
F = 2 A; VR > 30 V; -dIF/dt = 20 A/s
-
0.5
0.7
C
dI
R/dt
Maximum slope of the reverse
I
F = 2 A; -dIF/dt = 20 A/s
-
50
60
A/
s
recovery current
May 1995
2
Rev 1.000
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