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參數資料
型號: 934048170118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 800 V, 12 A, SNUBBERLESS TRIAC
文件頁數: 2/8頁
文件大小: 69K
代理商: 934048170118
Philips Semiconductors
Product specification
Three quadrant triacs
BTA212B series B
high commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
1.5
K/W
junction to mounting base
half cycle
-
2.0
K/W
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
2
18
50
mA
T2+ G-
2
21
50
mA
T2- G-
2
34
50
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
31
60
mA
T2+ G-
-
34
90
mA
T2- G-
-
30
60
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
31
60
mA
V
T
On-state voltage
I
T = 17 A
-
1.3
1.6
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A; Tj = 125 C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 C;
1000
4000
-
V/
s
off-state voltage
exponential waveform; gate open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C; IT(RMS) = 12 A;
-
24
-
A/ms
commutating current
without snubber; gate open circuit
t
gt
Gate controlled turn-on
I
TM = 12 A; VD = VDRM(max); IG = 0.1 A;
-
2
-
s
time
dI
G/dt = 5 A/s
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
相關PDF資料
PDF描述
934048160118 600 V, 12 A, SNUBBERLESS TRIAC
934048190118 800 V, 16 A, SNUBBERLESS TRIAC
934048180118 600 V, 16 A, SNUBBERLESS TRIAC
934048210118 800 V, 25 A, SNUBBERLESS TRIAC
934048200118 600 V, 25 A, SNUBBERLESS TRIAC
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