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參數資料
| 型號： | 934049790118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 43K |
| 代理商： | 934049790118 |
Philips Semiconductors
Product specification
Triacs
BT137S series
Fig.1. Maximum on-state dissipation, P
tot, versus rms
on-state current, I
T(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb ≤ 102C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
02
468
10
0
2
4
6
8
10
12
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
121
117
113
109
105
101
1
-50
0
50
100
150
0
2
4
6
8
10
BT137
102 C
Tmb / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T2- G+ quadrant
dI /dt limit
T
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1
10
100
1000
0
Number of cycles at 50Hz
ITSM / A
1
10
20
30
40
50
60
70
80
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
June 2001
3
Rev 1.400
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