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參數(shù)資料
| 型號： | 934054760127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 16 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 44K |
| 代理商： | 934054760127 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYL1625 series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 20 V/ 25 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 16 A
Low thermal resistance
V
F ≤ 0.46 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes intended
PIN
DESCRIPTION
for use as output rectifiers in low
voltage, high frequency switched
1
cathode
mode power supplies.
2
anode
The PBYL1625 series is supplied in
the
SOD59
(TO220AC)
tab
cathode
conventional leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL16
20
25
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 120 C
-
20
25
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 131 C
-
16
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 131 C
-
32
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a
12
1
tab
2
March 1998
1
Rev 1.000
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