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參數資料
| 型號： | 934054774118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 12.5 A, 25 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/8頁 |
| 文件大小： | 86K |
| 代理商： | 934054774118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYL2525CT, PBYL2525CTB series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 20 V/ 25 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 25 A
Low thermal resistance
V
F ≤ 0.43 V
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The PBYL2525CT series is supplied in the SOT78 (TO220AB) conventional leaded package.
The PBYL2525CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL25
20CT
25CT
PBYL25
20CTB
25CTB
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 120 C
-
20
25
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5; T
mb ≤ 119 C
-
25
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 119 C
-
25
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current per diode
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
1. It is not possible to make connection to pin 2 of the SOT404 package.
k
a1
a2
13
2
12 3
tab
13
tab
2
March 1998
1
Rev 1.000
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