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參數資料
| 型號： | 934054883118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/10頁 |
| 文件大小： | 92K |
| 代理商： | 934054883118 |
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F ≤ 0.895 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 8 A
Low thermal resistance
I
RRM = 0.2 A
t
rr ≤ 25 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
1
no connection
2
cathode
1
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYW29EB/ BYW29ED
-150
-200
V
RRM
Peak repetitive reverse
-
150
200
V
voltage
V
RWM
Working peak reverse
-
150
200
V
voltage
V
R
Continuous reverse voltage
-
150
200
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 128 C
-
8
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 128 C
-
16
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
80
A
current
t = 8.3 ms
-
88
A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
t
p = 2 s; δ = 0.001
-
0.2
A
surge current
I
RSM
Peak non-repetitive reverse
t
p = 100 s
-
0.2
A
surge current
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 40
150
C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a
tab
3
1
2
3
tab
13
tab
2
November 1998
1
Rev 1.300
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