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參數資料
| 型號： | 934055230135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | PLASTIC, SMD, UMD2, URP, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 52K |
| 代理商： | 934055230135 |
1998 Aug 31
2
Philips Semiconductors
Product specication
Band-switching diode
BA591
FEATURES
Very small plastic SMD package
Low diode capacitance:
max. 1.05 pF
Low diode forward resistance:
max. 0.7
Small inductance.
APPLICATIONS
Low loss band-switching in VHF
television tuners
Surface mount band-switching
circuits.
DESCRIPTION
The BA591 is a planar, high
performance band-switching diode in
the very small SOD323 SMD plastic
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A1.
The marking band indicates the cathode.
handbook, halfpage
12
MAM406
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
Ptot
total power dissipation
Ts =90 °C
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF =10mA
1V
IR
reverse current
VR =20V
20
nA
Cd
diode capacitance
f = 1 MHz; note 1; see Fig.2
VR = 1 V
0.8
1.05
pF
VR = 3 V
0.65
0.9
pF
rD
diode forward resistance
f = 100 MHz; note 1; see Fig.3
IF = 3 mA
0.45
0.7
IF = 10 mA
0.36
0.5
1/gp
reverse resistance
VR = 1 V; f = 100 MHz; note 1
100
k
LS
series inductance
2
nH
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