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參數資料
| 型號： | 934055282115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 51K |
| 代理商： | 934055282115 |
2002 Jan 25
3
Philips Semiconductors
Product specication
Band-switching diode
BA891
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
85
K/W
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF =10mA
1V
IR
reverse current
VR =30V
20
nA
Cd
diode capacitance
f = 1 MHz; note 1; see Fig.2
VR = 1 V
0.8
1.05
pF
VR = 3 V
0.65
0.9
pF
rD
diode forward resistance
f = 100 MHz; note 1; see Fig.3
IF = 3 mA
0.42
0.7
IF = 10 mA
0.28
0.5
LS
series inductance
0.6
nH
handbook, halfpage
010
20
30
1
0
0.8
0.6
0.4
0.2
MGL479
VR (V)
Cd
(pF)
Fig.2
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
handbook, halfpage
10
1
101
MGL478
101
110
IF (mA)
rD
(
)
Fig.3
Diode forward resistance as a function of
forward current; typical values.
f = 100 MHz; Tj =25 °C.
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