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參數(shù)資料
| 型號(hào)： | 934055648127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 87K |
| 代理商： | 934055648127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9514-55
Logic level FET
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
SYMBOL
PARAMETER
MAX.
UNIT
level field-effect power transistor in a
plastic
envelope
using
’trench’V
DS
Drain-source voltage
55
V
technology. The device features very
I
D
Drain current (DC)
68
A
low on-state resistance and has
P
tot
Total power dissipation
142
W
integral zener diodes giving ESD
T
j
Junction temperature
175
C
protection up to 2kV. It is intended for
R
DS(ON)
Drain-source on-state
14
m
use in
automotive and general
resistance
V
GS = 5 V
purpose switching applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
55
V
DGR
Drain-gate voltage
R
GS = 20 k
-55
V
±V
GS
Gate-source voltage
-
10
V
I
D
Drain current (DC)
T
mb = 25 C
-
68
A
I
D
Drain current (DC)
T
mb = 100 C
-
48
A
I
DM
Drain current (pulse peak value)
T
mb = 25 C
-
240
A
P
tot
Total power dissipation
T
mb = 25 C
-
142
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage
(100 pF, 1.5 k
)
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
1.05
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient
d
g
s
12 3
tab
April 1998
1
Rev 1.000
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