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參數資料
| 型號： | 934055762127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 103K |
| 代理商： | 934055762127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP20NQ20T, PHB20NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Very low on-state resistance
V
DSS = 200 V
Fast switching
Low thermal resistance
I
D = 20 A
R
DS(ON) ≤ 130 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device
has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP20NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB20NQ20T is supplied in the SOT404 (D
2PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 C; V
GS = 10 V
-
20
A
T
mb = 100 C; VGS = 10 V
-
14
A
I
DM
Pulsed drain current
T
mb = 25 C
-
80
A
P
D
Total power dissipation
T
mb = 25 C
-
150
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
13
tab
2
12 3
tab
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.000
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