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參數資料
| 型號： | 934055769127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, FPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 106K |
| 代理商： | 934055769127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX9NQ20T , PHF9NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 200 V
Fast switching
Low thermal resistance
I
D = 5.2 A
R
DS(ON) ≤ 400 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN
DESCRIPTION
1
gate
2
drain
3
source
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
hs =
25 C; V
GS = 10 V
-
5.2
A
T
hs = 100 C; VGS = 10 V
-
3.3
A
I
DM
Pulsed drain current
T
hs = 25 C
-
21
A
P
D
Total power dissipation
T
hs = 25 C
-
25
W
T
j, Tstg
Operating junction and
- 55
150
C
storage temperature
d
g
s
12 3
case
12 3
case
November 2000
1
Rev 1.100
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