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參數資料
| 型號： | 934055774127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-67, FPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 62K |
| 代理商： | 934055774127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 200 V
Fast switching
I
D = 7.6 A
R
DS(ON) ≤ 230 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN
DESCRIPTION
1
gate
2
drain
3
source
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 150C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
hs =
25 C; V
GS = 10 V
-
7.6
A
T
hs = 100 C; VGS = 10 V
-
4.8
A
I
DM
Pulsed drain current
T
hs = 25 C
-
30
A
P
D
Total power dissipation
T
hs = 25 C
-
30
W
T
j, Tstg
Operating junction and
- 55
150
C
storage temperature
d
g
s
12 3
case
12 3
case
November 2000
1
Rev 1.100
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