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參數(shù)資料
| 型號： | 934055797127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, FPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 934055797127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX23NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 100 V
Fast switching
I
D = 13 A
R
DS(ON) ≤ 70 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
T.V. and computer monitor power supplies
The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
PIN
DESCRIPTION
1
gate
2
drain
3
source
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
100
V
DGR
Drain-gate voltage
T
j = 25 C to 150C; RGS = 20 k
-
100
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 C; V
GS = 10 V
-
13
A
T
mb = 100 C; VGS = 10 V
-
8
A
I
DM
Pulsed drain current
T
mb = 25 C
-
52
A
P
D
Total power dissipation
T
mb = 25 C
-
27
W
T
j, Tstg
Operating junction and
- 55
150
C
storage temperature
d
g
s
12 3
case
September 1999
1
Rev 1.000
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