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參數資料
| 型號： | 934055815127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 153K |
| 代理商： | 934055815127 |
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN004-55W
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
V
DSS = 55 V
Very low on-state resistance
Fast switching
I
D = 100 A
Low thermal resistance
Logic level compatible
R
DS(ON) ≤ 4.2 m (VGS = 10 V)
R
DS(ON) ≤ 4.5 m (VGS = 5 V)
R
DS(ON) ≤ 5 m (VGS = 4.5 V)
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
SiliconMAX products use the latest
PIN
DESCRIPTION
Philips
Trench
technology
to
achieve
the
lowest
possible
1
gate
on-state
resistance
in
each
package at each voltage rating.
2
drain
Applications:-
3
source
d.c. to d.c. converters
switched mode power supplies
tab
drain
The PSMN004-55W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
55
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-55
V
GS
Continuous gate-source
-
± 15
V
voltage
V
GSM
Peak pulsed gate-source
T
j ≤ 150 C
-
± 20
V
voltage
I
D
Continuous drain current
T
mb =
25 C; V
GS = 5 V
-
100
1
A
T
mb = 100 C; VGS = 5 V
-
100
1
A
I
DM
Pulsed drain current
T
mb = 25 C
-
300
A
P
D
Total power dissipation
T
mb = 25 C
-
300
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
2
3
1
1 Maximum continuous current limited by package.
October 1999
1
Rev 1.100
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