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參數(shù)資料
| 型號(hào)： | 934055889115 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | PIN二極管 |
| 英文描述： | 60 V, SILICON, PIN DIODE |
| 封裝： | PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 58K |
| 代理商： | 934055889115 |
2000 Jul 06
2
Philips Semiconductors
Product specication
General purpose PIN diode
BAP51-02
FEATURES
Low diode capacitance
Low diode forward resistance.
APPLICATIONS
General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 ultra small SMD
plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
12
Top view
MAM405
Marking code: K1.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
60
V
IF
continuous forward current
50
mA
Ptot
total power dissipation
Ts =90 °C
715
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF =50mA
0.95
1.1
V
VR
reverse voltage
IR =10 A50
V
IR
reverse current
VR =50V
100
nA
Cd
diode capacitance
VR = 0; f = 1 MHz
0.4
pF
VR = 1 V; f = 1 MHz
0.3
0.55
pF
VR = 5 V; f = 1 MHz
0.2
0.35
pF
rD
diode forward resistance
IF = 0.5 mA; f = 100 MHz; note 1
5.5
9
IF = 1 mA; f = 100 MHz; note 1
3.6
6.5
IF = 10 mA; f = 100 MHz; note 1
1.5
2.5
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
85
K/W
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