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參數資料
| 型號： | 934056007118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 16 A, TRIAC |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 50K |
| 代理商： | 934056007118 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA216B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation triacs in
SYMBOL
PARAMETER
MAX.
UNIT
a plastic
envelope suitable for surface
mounting, intended for use in motor control
BTA216B-
600D
circuits or with other highly inductive loads.
BTA216B-
600E
These devices balance the requirements of
V
DRM
BTA216B-
600F
V
commutation
performance
and
gate
Repetitive peak off-state
600
sensitivity. The "sensitive gate" E series and
I
T(RMS)
voltages
A
"logic level" D series are intended for
I
TSM
RMS on-state current
16
A
interfacing with low power drivers, including
Non-repetitive peak on-state
140
micro controllers.
current
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DRM
Repetitive peak off-state
-
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
16
A
T
mb ≤ 99 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 C prior to
surge
-
t = 20 ms
-
140
A
t = 16.7 ms
150
A
I
2tI2t for fusing
t = 10 ms
-
98
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 20 A; IG = 0.2 A;
100
A/
s
on-state current after
dI
G/dt = 0.2 A/s
triggering
I
GM
Peak gate current
-
2
A
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
13
mb
2
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
April 2002
1
Rev 2.000
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