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參數資料
| 型號： | 934056007118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 16 A, TRIAC |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934056007118 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA216B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
1.2
K/W
junction to mounting base
half cycle
-
1.7
K/W
R
th j-a
Thermal resistance
minimum footprint, FR4 board
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BTA216B-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
10
25
mA
T2+ G-
-
5
10
25
mA
T2- G-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
mA
T2+ G+
-
15
25
30
mA
T2+ G-
-
25
30
40
mA
T2- G-
-
25
30
40
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
15
25
30
mA
...D, E, F
V
T
On-state voltage
I
T = 20 A
-
1.5
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
1.5
V
D = 400 V; IT = 0.1 A;
0.25
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 C
-
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BTA216B-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);30
60
70
-
V/
s
off-state voltage
T
j = 110 C; exponential
waveform; gate open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
2.5
6.2
18
-
A/ms
commutating current
I
T(RMS) = 16 A;
dV
com/dt = 10V/s; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
12
20
50
-
A/ms
commutating current
I
T(RMS) = 16 A;
dV
com/dt = 0.1V/s; gate
open circuit
2 Device does not trigger in the T2-, G+ quadrant.
April 2002
2
Rev 2.000
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