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參數資料
| 型號： | 934056031127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1500 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, TOP-3D, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 55K |
| 代理商： | 934056031127 |
Philips Semiconductors
Product specification
Dual diode
BYM359DX
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
DAMPER
MODULATOR
Fast switching
Soft recovery characteristic
V
R=1500 V
V
R=800 V
High thermal cycling
performance
V
F ≤ 1.3 V
V
F ≤ 1.45 V
Isolated mounting tab
I
F(RMS) =15.7 A
I
F(RMS) = 11 A
I
FSM ≤ 60 A
I
FSM ≤ 60 A
t
rr ≤ 300 ns
t
rr ≤ 145 ns
GENERAL DESCRIPTION
PINNING
SOT399
Combined damper and modulator
PIN
DESCRIPTION
diodes
in
an
isolated
plastic
envelope for horizontal deflection in
1
modulator anode.
colour TV and PC monitors.
The BYM359DX contains diodes
2
common anode/cathode
with performance characteristics
designed specifically for
3
damper cathode
applications from 16kHz to 56kHz
The BYM359DX series is supplied
in the conventional leaded SOT399
package.
LIMITING VALUES
T
j = 25 C unless otherwise stated
DAMPER
MODULATOR
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
MIN
MAX
UNIT
V
RSM
Peak non-repetitive reverse
-
1500
-
800
V
voltage.
V
RRM
Peak repetitive reverse voltage
-
1500
-
600
V
RWM
Crest working reverse voltage
-
1300
-
600
V
I
F(AV)
Average forward current
sinusoidal;a=1.57
-
10
-
8
A
I
F(RMS)
RMS forward current
-
15.7
-
11.0
A
I
FRM
Peak repetitive forward current
t=25
s δ= 0.5
-
20
-
16.0
A
T
hs ≤ 83 C
I
FSM
Peak non-repetitive forward
t = 10ms
-
60
-
60
A
current
t = 8.3 ms
-
66
-
66
A
sinusoidal;
with reapplied
V
RWM(MAX)
T
stg
Storage temperature
-40
150
-40
150
C
T
J
Operating junction temperature
-
150
-
150
C
1
3
2
damper
modulator
case
12 3
March 2000
1
Rev 1.000
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