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參數資料
| 型號： | 934056035235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大小： | 290K |
| 代理商： | 934056035235 |
BSH112
N-channel enhancement mode eld-effect transistor
Rev. 01 — 25 August 2000
Product specication
c
M3D088
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
BSH112 in SOT23.
2.
Features
s TrenchMOS technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package
s Gate-source ESD protection diodes.
3.
Applications
s Relay driver
s High speed line driver
s Logic level translator.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT23, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT23
N-channel MOSFET
2
source (s)
3
drain (d)
12
3
03ab44
d
g
s
03ab60
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