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參數資料
| 型號： | 934056718115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, 6 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 54K |
| 代理商： | 934056718115 |
2002 Jan 17
2
Philips Semiconductors
Product specication
Schottky barrier double diode
BAS70-07V
FEATURES
Low forward voltage
High reverse voltage
Low capacitance
Ultra small plastic SMD package
Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Line termination
Inverse-polarity protection
RF applications (e.g. mixing and demodulation).
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies encapsulated in a SOT666 ultra small
SMD plastic package.
PINNING
PIN
DESCRIPTION
1
anode 1
2
not connected
3
cathode 2
4
anode 2
5
not connected
6
cathode 1
handbook, halfpage
12
3
4
6
5
Top view
MAM461
64
3
1
Fig.1
Simplified outline (SOT666) and symbol.
Marking code: 77.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
70
V
IF
continuous forward current
70
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
70
mA
IFSM
non-repetitive peak forward current
tp <10ms
100
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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