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參數(shù)資料
| 型號(hào)： | 934056718115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, 6 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 934056718115 |
2002 Jan 17
4
Philips Semiconductors
Product specication
Schottky barrier double diode
BAS70-07V
GRAPHICAL DATA
10
0
0.2
0.4
0.6
0.8
1
I F
(mA)
V (V)
F
MRA803
(1)
(4)
(2)
(3)
10 2
10 1
10
2
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
(4) Tamb = 40 °C.
MRA805
1
10
0
20406080
V (V)
R
IR
(
A)
(1)
(3)
(2)
2
10 1
10 2
10 3
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 150 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
10
1
110
rdiff
IF (mA)
MRA802
101
102
103
Fig.4
Differential forward resistance as a function
of forward current; typical values.
f = 10 kHz.
0
0.5
1
1.5
2
0
204060
80
MRA804
Cd
(pF)
V (V)
R
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
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